Abstract
New non-linear optoelectronic and photovoltaic behavior of crystalline silicon (c-Si) has been obtained with a strained nanoscale Si-layered system. We have found c-Si absorptances that even exceed values of amorphous silicon (a-Si) thin films. The present investigation exploits charge carrier and photon flux transformations at the so-called carrier collection limit. A correlation between free carrier density and the absorption coefficient could be established by combining reflectivity and transmissivity measurements on samples having different surface free carrier reservoirs. In summary, Si modifications implemented on the nanoscale lead to new effects that can widen applications of conventional Si devices.
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