Abstract
Due to the spatial and temporal close proximity of cluster ion bombardment on Silicon, radiation damage of Si due to cluster ions cannot be extrapolated from that of atomic ions. In this paper we overview our recent observations of radiation damage in Si by clusters of C and Au aggregates of up to 10 atoms and 4 atoms respectively. Quantification of damage is made by RBS/channeling. We observed hyper linear radiation damage depending on cluster size. We developed a theoretical interpretation of this observation using a collision cascade overlapping model.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
