Non-lattice matched growth of In xGa 1-xAs (0.53< x

Abstract

The linearly-graded low-temperature buffer (LGLTB) approach developed by Harmand et al. [1] for growing materials with lattice parameters different from the substrate was extended to thick layers and minority carrier devices, using In x Ga 1- x As alloys with x=0.53 to 0.80 on InP. Structurally, the device layers were 90% to 100% relaxed with less than mid 10 5 cm -2 threading dislocations. Mobilities for 3 μm thick layers as well as modulation-doped structures of In 0.80Ga 0.20As were as high as 16,300 cm 2/V·s at room temperature. p-n Homojunction diodes were nearly ideal and could be modeled with a diffusion-controlled leakeage current using minority carrier lifetimes of τ n = τ p =5×10 -9 s.