Non-equilibrium impurity redistribution in Si

Abstract

A low-energy Ar ion irradiation of a boron-doped silicon sample results in the formation and subsequent propagation of an n–p junction from the front surface into the bulk, to the depth comparable to the sample thickness. The effect is attributed to the generation of self-interstitials at the irradiated surface, and their long-range diffusion into the sample. The in-diffused self-interstitials lead to a loss of boron acceptors, either by the kick-out reaction or by acceleration of oxygen transport (and formation of boron–oxygen complexes).