Abstract
A new fabrication process of a lateral surface superlattice has been reported. A low-energy Ar ion irradiation has been used to fabricate a one-dimensional lateral surface superlattice. The decrease of carrier concentration and mobility has been investigated to avoid the serious damage caused by ion bombardment. The mobility decreases significantly with ion dose rather than carrier concentration and its scattering mechanisms are discussed. In addition, a Schottky gate on top of the superlattice is used to change the Fermi energy of two-dimensional electron gas and the anisotropic threshold characteristics are observed. Weiss oscillations can be modified by applying positive bias voltage to the gate.
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