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Abstract
Reflectance difference (RD) spectroscopy was employed for contactless determination of the free-carrier concentrations in n-ZnSe grown by molecular beam epitaxy (MBE). In materials systems that show the linear electro-optic (LEO) effect, the LEO-induced RD signal from the region of the E 1 and E 1 + Δ 1 transitions can be used to estimate the net doping level. In this study we have investigated n-type ZnSe for a wide range of carrier concentrations (9 × 10 16 to 5 × 10 18 cm −3). Our results show that the carrier concentration can be determined from the gauged RD spectra with an accuracy of approx. ± 20% for net donor concentrations of the order of 10 18 cm −3.
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