Abstract
We have carried out in situ measurements of optical anisotropy in the depletion layer of Cl-doped n-type ZnSe during molecular beam epitaxy. Reflectance difference (RD) spectroscopy was employed to measure the anisotropy which was induced by the linear electro-optic (LEO) effect. A power-law relation was obtained between the LEO signature near the E 1 and E 1+ Δ 1 transition energy and the carrier concentration determined from ex situ capacitance–voltage measurements. Using this result we are now able to measure and control the carrier concentration in situ and in real time during ZnSe growth. Quantitative relation between built-in electric field in the depletion layer and the amplitude of the LEO signature of the RD spectra is discussed.
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