Abstract
The structural ordering of surface atoms during Si deposition on singular and vicinal GaAs(001) surfaces has been studied by reflectance difference (RD) spectroscopy using the difference function between the Si-covered and the bare surface. In dependence on the Si coverage the difference spectra correspond to RD spectra of the bare Si(001)-(1×2) or of the As-terminated Si(001):As(2×1) surface. This finding and the behaviour of RD transients recorded at 3.8 eV photon energy allows to define a (3×2) α phase with Si dimers in the top layer and Ga dimers in the third layer, and a (3×2) β phase with As-dimer rows on top of Si in the second layer.
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