“Non-destructive” B, P and As dosimetry using normal incidence oxygen

Abstract

Full wafer SIMS provides SIMS metrology without breaking the wafer. SIMS, known as a destructive method in the scientific sense, can be regarded as non-destructive in the practical sense provided it does nothing which would prevent the wafer being returned to production. This can be assumed as long as only oxygen primary ions are used. Depth profiling with oxygen primary ions changes the wafer much less than the oxidation and patterning wafer processing steps. All the oxygen beam bombardment leaves behind is a small, shallow crater with a nanometer layer of SiO 2 at the bottom. This work shows that “non-destructive” implant dose monitoring using oxygen primary ions is not limited to B in Si and SiGe. Ultra shallow P and As dose monitoring is also possible using normal incidence oxygen primary ions. Results of high precision dose monitoring and mapping obtained by CAMECA's full wafer quadrupole SIMS 4600 are presented.