Abstract
Full wafer SIMS without breaking the 300mm wafer has the advantage of saving cost and speeding‐up response time. A variety of performance examples for B, As and P implants in Si and for B levels in SiGe is shown for both Cameca tools, the quadrupole based SIMS 4600 and the magnet based IMS Wf. Dose mapping and dose monitoring with an RSD around 0.5% are demonstrated and the added value of dopant profiles is illustrated.
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