Abstract
A high-energy ion scattering technique has been employed to analyze not only thin Si films grown epitaxially on anodized porous silicon but also their solid-solid interfaces. The usefulness of a Monte Carlo simulation of the behaviour of high-energy ions impinged onto the solid is emphasized for a quantitative characterization of the atomic structure in multi-layered specimens. Depth distribution of lattice disorders in a thin (∼ 50 nm) Si film grown epitaxially on the anodized porous Si is discussed with angular-scan data in the vicinity of the exact channeling direction. It has been found that only the exact channeling data is sometimes insufficient for the characterization of the crystalline quality of thin films.
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