Abstract

The significantly increased stability of third-generation semiconductors, both mechanically and chemically, presents a significant challenge to traditional wafer grinding. This study develops pure electrical discharge machining as an alternative for non-contact wafer grinding and thinning to achieve high precision and low cost. This method employs a copper-made rotary cup wheel as the tool electrode to replace the conventional diamond wheel to realize electrical discharge grinding. A prototype is built to evaluate the new process with single-crystal SiC. Aiming at ultra-precision machining, the material response of SiC to both single and consecutive discharge is elucidated. The influencing mechanism of pulse conditions on hard, brittle crystalline SiC material is demonstrated via experiments and simulation. Further, the material removal behavior, grinding stability, surface integrity, wafer shape accuracy, and process-induced subsurface damage are comprehensively investigated via single and consecutive discharge experiments under various conditions. In addition, the extreme precision that is achievable by contemporary EDM technology is explored. As a result, a 30 μm thin Φ20 mm SiC wafer with a subsurface damaged layer <1 μm was obtained, showing the potential of EDM for the processing of third-generation semiconductor wafers.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.