Noise-Optimized Silicon Radiometers.

Abstract

This paper describes a new, experimentally verified, noise analysis and the design considerations of the dynamic characteristics of silicon radiometers. Transimpedance gain, loop gain, and voltage gain were optimized versus frequency for photodiode current meters measuring ac and dc optical radiation. Silicon radiometers with improved dynamic characteristics were built and tested. The frequency-dependent photocurrent gains were measured. The noise floor was optimized in an ac measurement mode using photodiodes of different shunt resistance and operational amplifiers with low 1/f voltage and current noise. In the dark (without any signal), the noise floor of the optimized silicon radiometers was dominated by the Johnson noise of the source resistance. The Johnson noise was decreased and equalized to the amplified 1/f input noise at a 9 Hz chopping frequency and 30 s integration time constant, resulting in an equivalent root-mean-square (rms) photocurrent noise of 8 × 10−17 A. The lowest noise floor of 5 × 10−17 A, equal to a noise equivalent power (NEP) of 1.4 × 10−16 W at the 730 nm peak responsivity, was obtained at a 100 s integration time constant. The radiometers, optimized for ac measurements, were tested in a dc measurement mode as well. Performances in ac and dc measurement modes were compared. In the ac mode, a ten times shorter (40 s) overall measurement time was needed than in the dc mode (400 s) to obtain the same 10−16 A noise floor.