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Abstract
An accurate modeling of noise temperature for AlGaAs/GaAs HEMTs and AlGaAs/InGaAs/GaAs Pseudomorphic HEMTs (PHEMTs) is presented. The analysis is based on a self-consistent solution of Schrödinger and Poisson's equations. Pseudomorphic HEMTs have a lower noise temperature as compared to normal AlGaAs/GaAs HEMTs. The minimum noise temperature in pseudomorphic HEMTs decreases with increasing quantum-well (QW) width. Noise temperature in general increases with increasing gate length.
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