Abstract
A model to determine the noise properties for AlGaAs/InGaAs/GaAs Pseudomorphic HEMTs is presented. The analysis is based on a self‐consistent solution of Schrodinger and Poisson’s equations. Pseudomorphic HEMTs (PHEMTs) have a lower noise figure and temperature as compared to normal AlGaAs/GaAs HEMTs. Minimum noise temperature in pseudomorphic HEMTs decreases with increasing quantum well (QW) width. Noise temperature in general increases with increasing gate length.
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