Abstract
In this study, the possibilities of noise tailoring in filamentary resistive switching memory devices are investigated. To this end, the resistance and frequency scaling of the low-frequency 1/f-type noise properties are studied in representative mainstream material systems. It is shown that the overall noise floor is tailorable by the proper material choice, as demonstrated by the order-of-magnitude smaller noise levels in Ta2O5 and Nb2O5 transition-metal oxide memristors compared to Ag-based devices. Furthermore, the variation of the resistance states allows orders-of-magnitude tuning of the relative noise level in all of these material systems. This behavior is analyzed in the framework of a point-contact noise model highlighting the possibility for the disorder-induced suppression of the noise contribution arising from remote fluctuators. These findings promote the design of multipurpose resistive switching units, which can simultaneously serve as analog-tunable memory elements and tunable noise sources in probabilistic computing machines.
Highlights
In traditional electrical engineering, noise is considered as an issue, which is to be suppressed to the lowest possible level.[1,2]the introduction of new components is usually preceded by lengthy material optimization steps to decrease the low-frequency, 1/f-type noise generated by material imperfections.[3,4] The emergence of novel neuromorphic computing architectures,[5,6] brings a paradigm change in noise engineering, demonstrating that tailored noise can be harvested as a useful computing resource in probabilistic computing schemes
(i) we study the influence of material choice on the base noise level; (ii) we investigate how the relative noise level scales with the analog-tunable resistance states of RRAMs; and (iii) we deliver a fundamental understanding of the resistance scaling of the noise by model considerations
We have demonstrated that our Nb2O5 scanning tunneling microscope (STM) pointcontact devices preserve the metallic conduction through electronically transparent, unbroken filaments down to the level of single-atom diameters.[35]
Summary
Noise is considered as an issue, which is to be suppressed to the lowest possible level.[1,2]. (i) we study the influence of material choice on the base noise level; (ii) we investigate how the relative noise level scales with the analog-tunable resistance states of RRAMs; and (iii) we deliver a fundamental understanding of the resistance scaling of the noise by model considerations To this end, we analyze the resistance and frequency dependence of the intrinsic noise in Ta2O5- and Nb2O5-based resistive switching devices and compare these results to the markedly different noise levels observed in Agbased resistive switching filaments. Our analysis brings a counterintuitive conclusion demonstrating that the order-of-magnitude noise suppression of the transition-metal oxide resistive switching units compared to the Ag-based systems is primarily related to the enhanced level of disorder in the former material systems This disorder enhancement yields an increased suppression of those “remote” fluctuators’ noise contribution, which are located outside the narrowest region of the filaments
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