Noise spectroscopy of metastable deep level centers in Mg-doped GaN

Abstract

We present results from noise spectroscopy performed on p-type GaN:Mg samples. In addition to the 1/f noise, significant generation–recombination noise is observed and shown to be linked to metastable DX-like centers. We correlate these centers with metastable defects with optical ionization energies 1.1 and 1.9eV, respectively, reported in a previous work. The energy barriers for capture into and emission from the fundamental state are quantitatively determined. We propose a model for the configuration coordinate diagram that explains the PPC in GaN:Mg in the light of our results obtained from noise spectroscopy.