Abstract
Application of low frequency (LF) noise analysis to defect characterization, diagnostic, and reliability of electronic devices is based on the evaluation of the G‐R and 1/f noise. After some remarks on the parameters shifts induced by non‐stationary processes, specific examples on electromigration, p‐n junction devices, and FET’s are detailed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have