Abstract
Low frequency (LF) noise can be used as a diagnostic technique to analyse the quality and reliability of electron devices. Different reviews of the fundamental and excess LF noise sources in compound semiconductor transistors have been published in previous papers [1,2,3]. Examples of experimental correlation between LF noise and parasitic effects (i.e. electrical performance degradation) or failure mechanisms will be described for various compound semiconductor devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
