Noise measurement results of a radiation hardened CMOS 1.2 μm P-well process

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Noise performance of transistors fabricated in a radiation hardened CMOS 1.2 μm P-well process was measured using a multi-channel analyzer. The measured noise is presented in terms of equivalent noise charge (ENC) referred to the input of the device under test as a function of total input capacitances for various transistor width-over-length ( W/ L) ratios, channel lengths (from 1.2 μm to 3.2 μm), drain currents, and impulse response peaking times. A fitting program was used to extract the drain thermal noise and the flicker (1/ f) noise contributions from the noise data.