Abstract
This chapter is arranged as a bottom-up journey through the most important noise type in emerging resistive random access memory (RRAM) devices: random telegraph noise (RTN). In the last 10 years, RRAMs have gained enormous popularity and attracted the attention of many researchers and industries throughout the world. Studying noise, and particularly RTN, in such devices is of primary importance because it can contribute essential information about the physics of the devices and clarify the role and the atomistic properties of the defects. Starting from the basic mathematical formulation of RTN, we will analyze its statistical properties, and devise suitable methods to measure and analyze it. These methods will then be employed to characterize RTN, focusing on the representative case of the HfO2-based RRAM. Detailed results will be provided, which will clarify the physical mechanisms behind RTN and give hints about the atomistic properties of the defects involved. In addition, a physics-based compact model of RTN in RRAM devices will be developed, showing some of the opportunities that it can offer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
