Abstract
Ultra-thin HfO<sub>2</sub> high-k gate dielectric has been deposited directly on strained Si<sub>0.81</sub>Ge<sub>0.19 </sub>by atomic layer deposition (ALD). The effects of metal gate electrodes (Au, Pd and Pt) on dielectric properties and charge trapping behavior of metal-insulator-semiconductor (MIS) capacitors are investigated. Grazing incidence X-ray diffraction (GIXRD) analysis shows that the conversion from amorphous to crystalline phase start to appear in the HfO<sub>2</sub> films when annealed between 400-500°C. The measured <i>ΔV<sub>fb</sub></i>and hysteresis in high frequency C-V characteristics are used to study the pre-existing traps in the dielectric. Low-frequency noise characteristics have been measured using MIS capacitors with contact area ~ 2×10<sup>-3</sup> cm<sup>2</sup>. The power spectral densities (PSD) of the MIS capacitors with metal gate electrodes are compared and their bias dependencies are reported. While a two level random telegraph signal (RTS) is observed at low voltage, multilevel RTS is observed at higher bias voltages.
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