Abstract
This paper explores an analysis of low- and high-frequency noise in a heterojunction, selective buried oxide (SELBOX) with high-k gate dielectric TFET. The electrical parameters for different doping concentrations, δp+ layer width and mole fractions have been investigated. The proposed structure has been optimized for different positions of small gap on SELBOX substrate. It has been observed that the presence of small gap on SELBOX near the source region provides the lowest OFF current. The variation of noise (flicker + diffusion + generation − recombination) with frequency has been analysed. Further, the effect of various noise components on the device performance considering the current noise spectral density (SID) and voltage noise spectral density (SVG) is investigated. The impact of germanium mole fractions on noise components has been examined in terms of normalized current noise power spectral density and subthreshold swing.
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