Abstract
Noise becomes a critical performance for any electronic component when it is being used for communication systems, it makes MOSFETs less effective at performing their functions in a nanoscale regime. This paper proposed two devices namely, Re-S/D-JL-GAA and Re-S/D-GD-JL-GAA MOSFETs, and examines the noise parameters such as MNF, ACF, CCF, and Real Z0. In this study, the noise and linearity performance has been demonstrated for the mentioned devices at 20 nm channel length. All the noise parameters in device cases have been simulated at the frequency of 1 THz. The result determines that this device (Re-S/D-JL-GAA) applicable for the analog, RF low noise performance because the noise parameter is minimum compared to other devices. Here linearity parameters have been analyzed and the results reveal that the characteristics of device Re-S/D-GD-JL-GAA MOSFET are most significant compared to device cases. Hence it is a preferred device for communication applications compared to other devices.
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