Noise and Electrical Oscillations Generation during the Investigation of the Resistive Switching in the Yttria Stabilized Zirconia Films by Conductive Atomic Force Microscopy

Oleg Gorshkov,Dmitry Antonov,Dmitry Filatov,Ivan Antonov

doi:10.1155/2015/104657

Abstract

The effect of resistive switching in the yttria stabilized zirconia (YSZ) thin films on Si substrates has been studied by Conductive Atomic Force Microscopy (CAFM). The resistive switching of the YSZ films from the low conductive state to the highly conductive one has been found to be associated with the increasing of the noise with broad frequency spectrum related to the redistribution of the oxygen vacancies in YSZ. The electrical oscillations in oscillation loop connected in series to the CAFM probe, the sample, and the bias source related to the excitation of the oscillation loop by the noise in the probe-to-sample contact film have been observed. The effect discovered is promising for application in the memristor devices of new generation.

Highlights

At present, the effect of resistive switching in the thin dielectric films has attracted increased interest of the researchers
The resistive switching effect on the metal oxides is considered to originate from the drift of the oxygen vacancies in the electric field induced between the conductive electrodes [11]
The Conductive Atomic Force Microscopy (CAFM) investigations were carried out in ultrahigh vacuum (UHV) environment at 300 K using UHV scanning tunneling microscope/atomic force microscope (STM/AFM) Omicron UHV STM/AFM LF1 installed into Omicron MultiProbe RM UHV system

Summary

Introduction

The effect of resistive switching in the thin dielectric films has attracted increased interest of the researchers. Resistive switching effect has been observed in various materials like the transition metal oxides [5], chalcogenides [6], perovskites [7], and SiOx [8] as well as in some polymers [9], and so forth. The resistive switching effect on the metal oxides is considered to originate from the drift of the oxygen vacancies in the electric field induced between the conductive electrodes (which could be described in terms of the drift of the oxygen ions via the vacancies) [11]

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Conclusion