Noise analysis of silicon carbide JFETs

Abstract

The low frequency noise of silicon carbide junction field effect transistors has been systematically studied at room temperature and at T = 77 K. At room temperature, 1 f 3 2 spectra are attributed to surface thermal noise induced by lumped thermal noise generators distributed along the surface, in a way similar to that of GaAs thin-film resistors. At 77 K, generation-recombination noise is observed, and shot noise originates from drain and source contacts.