Low-frequency noise in 4H–silicon carbide junction field effect transistors

Abstract

Low frequency noise in 4H-silicon carbide junction field effect transistors (JFETs) has been investigated. JFETs with a buried p+n junction gate were manufactured by CREE Research Inc. Very low noise level has been observed in the JFETs. At 300 K the value of Hooge constant α is as small as α∼10−5 and the α value can be decreased by an appropriate annealing to α∼2×10−6. It has been shown that even these extremely low noise values are determined not by the volume noise sources but by the noise at the SiC–SiO2 interface.