Abstract
This study reports an analysis of noise figures (NFs) in a reflection-type microwave amplifier using resonant tunnelling diodes (RTDs). The minimum NF for the RTD amplifier based on 0.9 μm InP process technology, featuring a power gain (S 21) of 10.4 dB and a dc-power consumption of 133 μW at a centre frequency of 5.7 GHz, is measured to be 5.08 dB at a bias voltage of 0.355 V. The estimated NF characteristic based on an equation of the noise factor caused by the shot noise (F SH) and a simulation of the noise factor generated by the thermal noise (F TH) closely matches the measured NF characteristic, in the high-gain bias range of 0.32–0.38 V and near the centre frequency. It is found that the measured NF value of 5.08 dB originates mostly from the F SH of 1.88 and the F TH of 2.02. Additionally, the effect of the RTD parameters on the achieved NF is investigated, indicating that the negative resistance (R D) magnitude had a dominant effect on the NF by changing the F TH as well as the F SH.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
