Abstract
AbstractTiO2 films are formed galvanostatically in 1 N H2SO4 by anodic polarization. The resulting amorphous oxide layer is about 30 nm thick. The films are sputtered with Ne+, and Kr+ in the energy range from 2 to 9 keV. This sputter process is always combined with an implantation of the sputter ions in a partially reduced oxide. The distribution of penetration depth (1−10 nm) of implanted noble gas ions is investigated by two methods. In the top few nanometres it is derived from angle‐resolved X‐ray photoelectron spectroscopy measurements. The obtained results can be assigned approximately to a two‐layer model with an inner implantation layer (d1 = 10 nm, cAr = 10–25%) and a gas‐free surface layer (dGF = 0.5–2 nm) owing to diffusion and outgassing of the implanted noble gas ions. On the other hand, we carried out Kr+ sputter profiles of TiO2 implanted with Ar+ and Ne+ by previous sputtering. This yields an immediate decrease of the previous sputter gas (Ar, Ne) concentration which is explained by fast diffusion of Ar and Ne induced by the high temperatures during the Kr+ sputtering.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
