Computer simulation of sputtering and implantation processes under grazing ion bombardment of binary crystal surface

Abstract

The peculiarities of ion implantation and sputtering processes on the binary crystal surface under conditions of low-energy ion bombardment at grazing incidence have been investigated by computer simulation. The angular and spatial distributions of sputtered particles and their yields for 5 keV Ne ion bombardment of GaP(0 0 1) surface as well as the depth distributions of the 1 keV Be and Se ions implanted into GaAs(0 0 1) for a range of grazing angles of incidence (3–30°) at different crystal orientation (〈1 1 0〉, 〈 1 ̄ 1 0〉 ) have been calculated and compared. It was shown that at grazing ion bombardment the projectile ions generate a great number of low energy primary knock-on atoms. These recoil atoms are ejected with preferential escape direction in space. At grazing incidence the main peak of the implanted depth distributions is considerably shallow. It was observed that the range for Se is shallower than that for Be and the half-width of profile for Se is narrow.