Abstract
The high demand of smaller and compact size of MOSFETs has leads to desirable for ultra shallow junction formation with low sheet resistance and good electrical performances. These two characteristics are required to suppress short channel effects and to increase the efficiency of device. In this paper, Pre-amorphise implantation (PAI) PMOS with different doses of Boron and the basic PMOS structure are done by using ATHENA and the performance of devices is compared by using ATLAS software package from Silvaco TCAD. Comparison done in electrical characteristic, I-V curve Ion and Ioff has showed PMOS with PAI technology with low boron doses resulted in increasing electrical performance characteristic.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
