Abstract
Enhancement/Depletion (E/D) inverter, as one kind of NMOS inverters, is a promising supplementary technology for complementary logic circuits. Two n-channel bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) TFTs with different threshold voltage (Vth) were utilized to construct the E/D inverter. Tunable Vth was achieved by introducing an ultrathin SnOx capping layer onto the uncovered IGZO back channel surface. According to the composition evolution of the SnOx capping layers, it was believed that loosely bound oxygen in the IGZO can be consumed by the SnOx capping layer, resulting in the Vth negative-shift and enhanced field-effect mobility. The SnOx capping layer also had some effect on the prevention from moisture or oxygen in the air, hence leading to a good stability of the capped TFT when exposed to the air. In addition, the device bias stability was further improved after passivation with SU-8 photo-resist. Finally, an optimized inverter with a voltage gain up to 45.9 was realized. The proposed inverters demonstrated a great potential in the high-voltage-gain, low-cost, and easy-fabrication logic circuits. Figure 1
Published Version
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