Abstract
Point defects with non-zero spin are prototypical spintronic quantum dots. Here two anion-site defects in AlN are studied intensively in terms of their spin and related properties. The charged states of the nitrogen vacancy and substitutional oxygen impurity, in both ground and spin-flip states, are analyzed. The theoretical analysis includes optical absorption and emission, diffuse excited states, spin densities and local mode force constants. The relevance to spintronic quantum dots in semiconductors is discussed.
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