Abstract
The temperature dependences of the piezoelectric photo-thermal (PPT) signals from unintentionally doped p-type GaAsN films grown on semi-insulating GaAs substrate were measured from 80 to 300 K. From the theoretical analysis based on the rate equation for the recombination of photo exited carriers to the localized levels, we identified five majority hole traps, P1-P5 in GaAsN films. Among them, estimated concentrations of the P3 and P5 traps increased with the nitrogen contents. Therefore, we concluded that these two traps were due to nitrogen-related recombination centers in GaAsN.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
