Nitrogen ion-implanted resistive regions for edge termination of vertical Ga2O3 rectifiers

Abstract

N+ ion implantation to form resistive regions for edge termination at the anode contact periphery was used to maximize the breakdown voltage (VB) of vertical geometry β-Ga2O3 rectifiers. The design was examined via simulations using the Florida object oriented device and process Technology Computer-Aided Design (TCAD) simulator. The configuration of the implanted region was investigated with these simulations and then implemented experimentally. Significant increases of ∼200%–250% in VB were achieved for 50–1000 μm diameter rectifiers with an unbounded resistive region and an implantation depth of ∼0.5 μm. The on-state resistance and on/off ratios of the rectifiers were essentially unchanged by the addition of the implanted regions. An optimized implanted edge termination structure maximizes the breakdown voltage with no associated increase in device resistance in vertical geometry Ga2O3 rectifiers.