Abstract
Secondary cosmic-ray neutron-induced soft errors in an n-type metal-oxide-semiconductor field-effect transistor are analyzed based on the multiple sensitive volume (MSV) model using Particle and Heavy Ion Transport code System (PHITS). The soft error rates (SERs) and the collected charge for each single event are compared with those obtained by PHits-HYenexss integrated code System for Effects of Radiation on Device (PHYSERD) based on the detailed technology computer-aided design (TCAD) simulation and by the single sensitive volume (SSV) model using PHITS. It is found that PHITS+MSV provides approximate SERs in a shorter time than PHYSERD by estimating collected charges without event-by-event TCAD simulation. Furthermore, PHITS+MSV reproduces collected charge for each single event more accurately than PHITS+SSV by considering spatial dependence of the charge collection efficiencies. Therefore, PHITS+MSV is the most suitable to estimate SERs in practical design of semiconductor devices which require high accuracy and a short computational time.
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