Abstract
The InN phase is grown in crystalline InP(100) substrates by 50keV N+ implantation at an elevated temperature of 400°C followed by annealing at 525°C in N2 ambient. Crystallographic structural and Raman scattering studies are performed for the characterization of grown phases. Temperature- and power-dependent photoluminescence studies show direct band-to-band transition peak ∼1.06eV at temperatures ⩽150K. Implantations at an elevated temperature with a low ion beam current and subsequent low temperature annealing step are found responsible for the growth of high-quality InN phase.
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