Abstract
Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50keV N+ implantation at 400°C and subsequent annealing at 900°C for 15min in N2 ambient. The crystallographic structural and Raman scattering studies revealed that GaN phases were grown for fluence above 2×1017cm−2. Temperature-dependent photoluminescence study showed a sharp direct band-to-band transition peak ∼3.32eV at temperature ⩽200K. The intermediate band-gap value, with respect to ∼3.4eV for hexagonal and ∼3.27eV for cubic phases of GaN, is indicative of the formation of mixed hexagonal and cubic phases.
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