Abstract
A novel isolation technique which consists of a modified local oxidation of silicon (LOCOS) process with a nitrogen-doped amorphous-Si spacer has been developed. Nitrogen doping of amorphous-Si reduces its oxide growth rate. This isolation process shows the least encroachment, smallest maximum stress, and a deeper field oxide recess as compared to standard LOCOS or poly spacer LOCOS. The oxidation of nitrogen-doped amorphous-Si also has been simulated by an equivalent stacked layer.
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