Abstract
Copper phthalocyanine film, a p-type organic semiconductor, is synthesized by vacuum sublimation and its surface morphology is characterized by SEM. A silicon-based copper phthalocyanine film gas sensor for NO2 detection is fabricated by MEMS technology. The results show that the resistance and sensitivity of copper phthalocyanine film decrease obviously as the NO2 concentration increases from 0 ppm to 100ppm. However, the sensitivity nearly keeps a constant of 0.158 between 30 ppm and 70 ppm. The best working temperature of the gas sensor is 90° G for NO2 gas concentrations of 10 ppm, 20 ppm and 30 ppm, which is much lower than that of general metal oxide gas sensor.
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