Abstract
Nickel phthalocyanine film, a p-type organic semiconductor, is synthesized by vacuum sublimation and its surface morphology is characterized by SEM. A silicon-based nickel phthalocyanine film gas sensor for NO<sub>2</sub> detection is fabricated by MEMS technology. The results show that the current of nickel phthalocyanine film increase obviously from 3×10<sup>-2</sup>μA to 1.08μA as the NO<sub>2</sub> concentration increases from 0 ppm to 160 ppm. However, the sensitivity of NiPc thin film gas sensor nearly keeps a constant of 0.94 (average) between 10 ppm and 120 ppm with increasing NO<sub>2</sub> concentration. The best working temperature of the gas sensor is 50°C for NO<sub>2</sub> gas concentrations of 10 ppm, which is much lower than that of general metal oxide gas sensor.
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