Abstract
The structural properties of silicon oxynitride films grown in a environment at temperatures higher than and for use as gate dielectrics in vertically diffused power metal oxide semiconductor field effect transistor (PowerVDMOS) technologies have been studied by means of X-ray photoelectron spectroscopy. The progressive modifications of the bonding environments upon reaching the oxynitride–silicon interface have been analyzed as well as of the relation between these modifications and the selected oxynitridation process. The results show that the chemistry of the oxynitride layer is a rather complex one, and it significantly and progressively changes by moving toward the silicon interface, in a way strongly affected by the growth process. In particular, the medium thermal budget processes (, ) favor the formation of a relatively uniform distribution of the single oxidized bonds both at the interface and throughout its immediate backstage. Such findings can help in assessing the role played by the nitridation process in the quality and reliability performances of the final device.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
