Abstract
A new power metal oxide semiconductor field effect transistor (MOSFET) with deep body contact (DBC), which improves the avalanche energy capability, is proposed and verified by experimental results. For the experiment, a 60 V, 1 A power MOSFET employing DBC has been fabricated using a complementary metal oxide semiconductor (CMOS) compatible deep Si trench process. Previous simulations show that DBC alters the direction of the current flow from the edge to the bottom of the p-body under unclamped inductive switching (UIS) conditions. DBC also suppresses the activation of the parasitic bipolar transistor due to the reduction of the current density beneath the n+ source. Experimental results show that the ruggedness of the proposed power MOSFET is improved without sacrificing any other electrical characteristics and increasing device area.
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