Abstract
A new power metal oxide semiconductor field effect transistor (MOSFET) with a deep body contact, which improves the avalanche energy capability, is proposed and verified by the 2D numerical simulation. The deep body contact employing the trench process alters the direction of the current flow from the edge to the bottom of the p-body under the unclamped inductive switching (UIS) condition. The deep body contact also suppresses the activation of the parasitic bipolar transistor due to the reduction of the current density beneath the n+ source. The ruggedness of the proposed power MOSFET is improved without sacrificing any other electrical characteristics and increasing device area.
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