Nitrogen and indium dependence of the band offsets in InGaAsN quantum wells

Abstract

The band offsets of InGaAsN single quantum wells with varying nitrogen and indium content were quantitatively determined by surface photovoltage measurements. The experimental data directly show the different effect of nitrogen on the valence and on the conduction band states. While the conduction band offset strongly increases with increasing nitrogen concentration, the valence band offset is only weakly affected. In contrast, indium influences the valence and the conduction band states in the same way: both the valence and conduction band offsets increase with increasing indium content. In particular, the conduction band offset varies with In content as in N-free InGaAs quantum wells.