Abstract
ABSTRACTA novel organic material named ‘collodion’ was suggested as a gate insulator for amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). To find the optimized condition of the collodion gate insulator (CGI), the following three parameters of collodion solution were controlled: (1) the concentration of collodion solution; (2) the number of stacked layers; and (3) the spin-coating speed. The single-layered diluted CGI (collodion:ethanol=1:1) that was fabricated with a 3 krpm spin-coating speed exhibited an acceptable dielectric strength (J < 10−10 A/cm2 in the range of 1.1 MV/cm) and a high-dielectric constant (∼6.57) for the gate insulator layer. As a result, a-IGZO TFTs with CGI showed high-field effect mobility (∼17.11 cm2/Vs).
Highlights
Researches have been conducted of late on several solution-processed dielectric materials, including organic, inorganic, and hybrid organic-inorganic materials, to serve as a gate insulator layer for field effect transistors [1,2,3,4,5]
The single-layered diluted collodion gate insulator (CGI) that was fabricated with a 3 krpm spin-coating speed exhibited an acceptable dielectric strength (J < 10−10 A/cm2 in the range of 1.1 MV/cm) and a high-dielectric constant ( ∼ 6.57) for the gate insulator layer
The collodion solution is mainly composed of nitrocellulose, which is made by exchanging the hydroxyl groups (–OH) in cellulose with nitro-ester groups (–ONO2–) [14]
Summary
Researches have been conducted of late on several solution-processed dielectric materials, including organic, inorganic, and hybrid organic-inorganic materials, to serve as a gate insulator layer for field effect transistors [1,2,3,4,5]. Solution-processed organic materials have been extensively investigated due to their low-temperature process and high flexibility, which can enable their wide use for applications such as flexible, stretchable, and bendable electronic devices [6,7,8,9,10]. They have a lower manufacturing cost than vacuum-processed gate insulators [11,12]. It has not been applied to electronic devices, except for the passivation layer of a-IGZO TFTs
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