Abstract
Self-assembled NiSi2 nanowires with a high-aspect ratio have been fabricated by combining the methods of reactive deposition epitaxy and nitride-mediated epitaxy (NME). Both types of epitaxial NiSi2 nanowires, which are parallel and twin related to the substrates, were formed with the length/width aspect ratios increased by a factor of 8 with the effect of NME. One type of nanowire was successfully grown with a high-aspect ratio despite the four-fold symmetric epitaxial relationship between NiSi2 and Si with very small mismatch. The use of NME method effectively diminished the flux of Ni atoms and allowed sufficient time for the strain to be released by means of shape transition during the island growth at elevated temperatures.
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