Abstract
Nitride-based light-emitting diodes (LEDs) with n/sup -/-GaN current spreading layers were proposed and fabricated. With a 0.1-/spl mu/m-thick n/sup -/-GaN current spreading layer, it was found that the output power could be enhanced by 35% without increasing the operation voltage of the LEDs at 20 mA. In addition, implementing the n/sup -/-GaN current spreading layer also significantly improved the electrostatic discharge characteristics of nitride-based LEDs.
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