Abstract
Nitride-based light-emitting diodes (LEDs) grown with a structure of InN/GaN matrix quantum-wells (QWs) using metal-organic chemical vapor deposition are fabricated and characterized. The InN/GaN matrix QWs can significantly enhance the formation of phase-separated In-rich regions. Under an injection current of 500 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , the LED output power can be enhanced by 26%, and the efficiency droop can be improved as compared with a conventional LED. These improvements could be attributed to the strong localization effect to remove carriers from the confining potential and capture these carriers at nonradiative centers in the active layer.
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