Abstract
A titanium nitride (TiN) coating using microwaves can be accomplished in air, and satisfies the required conditions of an on-demand TiN coating process. However, the coating mechanism using microwaves is not completely clear. In this study, to understand the detailed mechanism of microwave titanium nitridation in air, the quantity of nitrogen and oxygen in reacted TiN powder has been investigated by an inert melting method. Titanium powders were irradiated with microwaves by a multi-mode type 2.45 GHz microwave irradiation apparatus, while also being held at various temperatures for two different dwell times. X-ray diffraction (XRD) results revealed that nitridation of the powder progressed with increasing process temperature, and the nitridation corresponds to the powder color after microwave irradiation. The nitrogen contents of the samples increased with increasing processing temperature and dwell time, unlike oxygen. It is postulated that the reaction of convected air with titanium is a key role to control nitridation in this system.
Highlights
Titanium nitride (TiN) has a rock salt structure and exhibits high electrical conductivity, high chemical stability and a low diffusion coefficient [1,2,3,4,5,6,7,8,9,10,11,12]
Conventional TiN coating processes, such as chemical vapor deposition (CVD) or physical vapor deposition (PVD), are difficult to apply as a small lot process, due to high processing costs and long processing times
The microwave power exhibited a pulsed behavior, as the radiated from a rotary antenna; theprofile microwave distribution in behavior, as the microwaves are radiated from a rotary antenna; the microwave distribution in the furnace, the power profile and the heating efficiency, oscillated
Summary
Titanium nitride (TiN) has a rock salt structure and exhibits high electrical conductivity, high chemical stability and a low diffusion coefficient [1,2,3,4,5,6,7,8,9,10,11,12] It is used as a diffusion barrier to prevent electromigration, which is a deterioration phenomenon between wiring materials on semiconductor substrates [13,14,15,16]. Takizawa et al have developed a new TiN coating technique in which substrate materials embedded in metallic titanium powder are irradiated with microwaves [23] This technique can be performed in air using a general-purpose device such as a microwave oven. This microwave TiN coating method could be utilized as an on-site TiN coating process
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